A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference
Wang Ye,Chunmeng Dou,Linfang Wang,Zhidao Zhou,Junjie An,Weizeng Li,Hanghang Gao,Xiaoxin Xu,Jinshan Yue,Jianguo Yang,Jing Liu,Dashan Shang,Jinghui Tian,Qi Liu,Ming Liu
DOI: https://doi.org/10.1109/A-SSCC56115.2022.9980669
2022-01-01
Abstract:Resistive Memory (RRAM) based computing-in-memory (CIM) can play a key role in intermittently operated AI edge devices and sensors [1] –[3]. By minimizing the data movement during computation and power switching, it effectively reduces the power and hence improves the real-time performance compared to conventional energy-efficient system. However, as shown in Fig. 1, previous RRAM CIM macros, based on 1T1R or 2T2R cell array, are still facing several critical challenges, including (1) large summation current induced considerable IR drop, which results in the nonlinearity between multiply-and-accumulate (MAC) signals and MAC values (MACV) [4], (2) MAC signal margin degradation due to small resistance-ratio (R-ratio), which makes the leakage of high-resistive-state (HRS) cell become non-negligible compared to that of the low-resistive-state (LRS) one [5], and (3) large hardware-cost for the analogue readout circuitry, which typically requires 2
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-1 stand-by reference signals for N-bit output precision [6].