Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer

E. Seven,E.Öz Orhan,A. Di Bartolomeo,M. Ertuğrul,N. Avişhan Taştekin
DOI: https://doi.org/10.1007/s12648-023-03062-7
2024-01-22
Indian Journal of Physics
Abstract:Waveguide-integrated graphene photodiodes are on-chip optoelectronic devices with promising applications in telecommunications. Here, we present the electrical properties of a heterostructure consisting of multilayer graphene (MLGr) over a Si waveguide covered by an ultrathin Al 2 O 3 layer. The waveguide is fabricated by etching a silicon-on-insulator (SOI) substrate with 220 nm Si and 1.5 μm buried oxide. The 5 nm-thick Al 2 O 3 film is deposited by atomic layer deposition (ALD), while graphene, synthesized on copper by chemical vapor deposition (CVD), is transferred onto the Al 2 O 3 /Si rib by a wet transfer method. The MLGr/Al 2 O 3 /Si rib forms a Schottky structure with rectifying current–voltage characteristics, which are examined using the thermionic emission theory and Norde's method. A Schottky barrier height , an ideality factor n = 26, and a series resistance are obtained. The device is promising for operation at the optical fiber communication wavelength of 1550 nm.
physics, multidisciplinary
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