Abstract:Achieving high quantum efficiency (QE) with low dark count is essential for highly sensitive photodetectors (PDs), including single photon avalanche detectors (SPADs). However, high QE requires a thicker absorber region, which leads to high dark current and noise, which in turn affects the detectivity of PDs and the photodetection efficiency and dark count of SPADs.The holy grail of photodetector and avalanche photodiode designs is to achieve highest QE with thinnest absorber and still enable large avalanche to gain as needed. We have developed a new design paradigm which exploits the coupling between dielectric Mie resonance and transverse propagating waves in thin layers. The Mie resonance launches the incident light at an angle in an ultrathin absorber, and when coupled to transverse waves, the light propagates laterally and is fully absorbed owing to the longer optical path. Consequently, with appropriate choice of materials for a chosen wavelength, a high absorption(~90%) within typically <100 nm absorber thickness is possible. For illustration, we apply our approach to design Si-based detector operating at 810 nm and InGaAs-based detector operating at 1550 nm and predict that the dark current at room temperature is reduced at least by two orders of magnitude. In addition, the lateral distances are often in a few microns and hence these designs can potentially enable avalanching for a large optical gain.

Design and modeling of an efficient high-speed InGaAs/InP QW waveguide-photodetector

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Design of Travelling-wave Photodetectors Impedance-matched over 135-Ghz Bandwidth

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

High-Power Ge/Si Waveguide Photodetector

Model for Speed Performance of Quantum-Dot Waveguide Photodiode

Waveguide-integrated self-powered van der Waals heterostructure photodetector with high performance at telecom wavelength

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

Design and Optimization of InAs Waveguide-Integrated Photodetectors on Silicon Via Heteroepitaxial Integration for Mid-Infrared Silicon Photonics

An integrated, crystalline organic waveguide-coupled InGaAs photodetector

High-responsivity operation of quantum cascade detectors at 9 µm

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

New design paradigm for highly efficient and low noise photodetector

Highly Efficient Metallic Optical Incouplers for Quantum Well Infrared Photodetectors

PIC-integrable high-responsivity germanium waveguide photodetector in the C plus L band