New design paradigm for highly efficient and low noise photodetector

Sagar Chowdhury,Rituraj,Srini Krishnamurthy,Vidya Praveen Bhallamudi

2024-07-24

Abstract:Achieving high quantum efficiency (QE) with low dark count is essential for highly sensitive photodetectors (PDs), including single photon avalanche detectors (SPADs). However, high QE requires a thicker absorber region, which leads to high dark current and noise, which in turn affects the detectivity of PDs and the photodetection efficiency and dark count of SPADs.The holy grail of photodetector and avalanche photodiode designs is to achieve highest QE with thinnest absorber and still enable large avalanche to gain as needed. We have developed a new design paradigm which exploits the coupling between dielectric Mie resonance and transverse propagating waves in thin layers. The Mie resonance launches the incident light at an angle in an ultrathin absorber, and when coupled to transverse waves, the light propagates laterally and is fully absorbed owing to the longer optical path. Consequently, with appropriate choice of materials for a chosen wavelength, a high absorption(~90%) within typically <100 nm absorber thickness is possible. For illustration, we apply our approach to design Si-based detector operating at 810 nm and InGaAs-based detector operating at 1550 nm and predict that the dark current at room temperature is reduced at least by two orders of magnitude. In addition, the lateral distances are often in a few microns and hence these designs can potentially enable avalanching for a large optical gain.

Applied Physics,Optics,Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to design a photodetector with high quantum efficiency (QE) and low dark current, especially single - photon avalanche diodes (SPADs). In order to achieve high absorptivity, traditional photodetectors usually require a relatively thick absorption layer, which will lead to high dark current and noise, and then affect the detection ability of the detector as well as the light detection efficiency and dark count rate of SPADs. Therefore, the goal of the research is to significantly reduce the thickness of the absorption layer while maintaining high absorptivity, thereby reducing the dark current and improving the overall performance of the detector.

Specifically, the paper proposes a new design paradigm. By using the coupling between dielectric Mie resonance and the laterally propagating wave in the thin layer, the incident light enters the ultrathin absorption layer at a certain angle and propagates laterally after coupling with the lateral wave. Due to the increase in the optical path, the light is completely absorbed. In this way, with the appropriate selection of materials, a high absorptivity of about 90% can be achieved when the thickness of the absorption layer is usually less than 100 nanometers. This design not only significantly reduces the dark current, but also makes it possible to achieve avalanche with large optical gain, especially having potential application value in single - photon detection operating at room temperature.