Abstract:This paper presents a novel on-chip passive bandpass fllter for millimeter-wave (MMW) applications that utilizes a pair of electrically-coupled thru-silicon vias (TSV). The presented TSV bandpass fllter can be used in MMW applications such as radar, medical imaging, and communication. The TSV bandpass fllter uses two TSVs to extend two electrically-coupled conductors into the silicon substrate in the z-direction instead of horizontally in the x-y plane. There is a metal layer on the bottom side of the silicon substrate that shorts the ends of the two TSVs to ground. Using TSVs in the bandpass fllter design reduces the silicon area required to implement the fllter compared to the silicon area required for the equivalent conventional fllter in the above-silicon metal-dielectric interconnect stack. The operating performance of the bandpass fllter is controlled at the design stage by choosing the separation distance between the TSVs. In this work, the two TSVs were 145"m in height (z-direction) and 3"m £ 50"m in the x-y plane. The long edges of the TSVs (50"m long edges) faced each other to maximize capacitance coupling between the TSV pair. The TSVs were separated by a distance of 5"m. Full-wave electromagnetic simulations of a TSV fllter designed in an IBM SiGe technology that included TSVs show a minimum pass-band insertion loss of i3:9dB at 77GHz with a usable pass band from 75{85GHz is possible. The simulated operating range of the TSV bandpass fllter design presented in this paper show that it is well suited for automotive radar applications.

Variable-Phase All-Pass Network Synthesis and Its Application to a 14–54 GHz Multiband Continuous-Tune Phase Shifter in Silicon

An 18~30 GHz Vector-Sum Phase Shifter with Two-Stage Transformer-Based Hybrid in 130-Nm SiGe BiCMOS

An 18 similar to 30 GHz Vector-Sum Phase Shifter With Two-Stage Transformer-Based Hybrid in 130-nm SiGe BiCMOS

29-/35 GHz Dual-band High-Gain Phase Shifter with Hybrid -Networks

An Ultra Broadband Passive Vector Modulator Phase Shifter

A Continuous K-Band Phase Shifter Based on Injection-Locked Dual Voltage-Controlled Oscillators

An E-band Subradix Active Phase Shifter with < 0.69° RMS Phase Error and 16-Db Attenuation in 28-Nm CMOS

A 28ghz Injection-Locked Voltage-Controlled Oscillator Pair with Tunable Phase Outputs in 130nm CMOS.

A Calibration Scheme for 24–28-Ghz Variable-Gain Phase Shifter in 65-Nm CMOS

Broadband Nonreciprocal Spoof Plasmonic Phase Shifter Based on Transverse Faraday Effects

A Broad-Band Analog Phase Shifter Design on I-Q Vector Modulator

A Novel Architecture for Integrated Cmos Wideband Pll- Based Frequency Synthesizer

A Novel Compact Thru-Silicon-Via On-Chip Passive Mmw Bandpass Filter for 77ghz Applications

An Efficient Mm-Wave Integrated Circuit Synthesis Method With Accurate Scalable Passive Component Modeling

A 44-52 GHz Reflection-type Phase Shifter with 1.4° Phase Resolution in 28nm CMOS Process

A Digitally-Controlled Bidirectional 24-32 GHz Variable Gain Phase Shifter in 45 nm SOI CMOS

A 360$^{\circ}$ Low Phase Error Tunable Phase Shifter With High-Pass and Low-Pass Networks Based on SISL

A 21 to 30-Ghz Merged Digital-Controlled High Resolution Phase Shifter-Programmable Gain Amplifier with Orthogonal Phase and Gain Control for 5-G Phase Array Application

10-GHz Low-Loss Liquid Metal SIW Phase Shifter for Phased Array Antennas

A 79ghz 5-Bit Phase Shifter with Π-Network in 28-Nm CMOS

Design of a Wideband Reconfigurable Transmitarrray Element Using a Novel Phase Shifter with Varactors and PIN Diodes