Abstract:A detailed investigation of the exciton‐harvesting layers (EHLs) with phosphorescence (PH) and thermally activated delayed fluorescence (TADF) dyes is conducted to confirm the benefit of TADF‐EHL in green‐emitting InP quantum dot light‐emitting diodes. Further, adopting the top‐emission structure remarkably enhances light outcoupling with complete suppression of the blue parasitic peak, which realizes a record‐high current efficiency of 68.0 cd A−1. Quantum dot light‐emitting diodes (QLEDs) are considered promising candidates for several optoelectronic applications; however, they are plagued by the over‐injection of electrons compared to holes, which limits device efficiency. Studies have attempted to reuse the leaked electrons and transfer recombination energies via inserting an exciton‐harvesting layer (EHL) between the emissive layer (EML) and hole transport layer (HTL). This study conducts a detailed analysis of the energy transfer mechanisms to obtain better insights into improving the device performance. First, by analyzing the electroluminescence (EL) spectra and exciton dynamics, the effect of EHLs comprising phosphorescence (PH) or thermally activated delayed fluorescence (TADF) blue dopant is compared. Through parallel incorporation of those EHLs on QLEDs and organic LEDs, the minimal contribution of the PH‐EHL to energy transfer in QLEDs is confirmed, whereas the TADF‐EHL has a significant contribution. Second, highly efficient top‐emission green QLEDs with the TADF‐EHL are achieved. They exhibit a maximum luminance (L) and current efficiency (CE) of 40700 cd m−2 and 68.0 cd A−1, respectively, which are the highest among the reported values for green‐emitting InP QLEDs. The proposed approaches are expected to provide aid in the realization of highly efficient QLEDs from the analysis to the device optimization stage.

Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region

Quantum-dot Light-Emitting Diodes with Fermi-level Pinning at the Hole-Injection/hole-transporting Interfaces

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Simulation and Design of Step-like InGaN Quantum Well Structure Blue Light-emitting Diode

Effect of multiple quantum well periods on structural properties and performance of extended short-wavelength infrared LEDs

Realization of Highly Efficient InP Quantum Dot Light‐Emitting Diodes through In‐Depth Investigation of Exciton‐Harvesting Layers

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

Improving the Internal Quantum Efficiency of Green Ingan Quantum Dots Through Coupled Ingan/Gan Quantum Well and Quantum Dot Structure