Abstract:Copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on brass substrates are proposed to achieve cold cathode hemispherical X‐ray sources. Strain‐driven solid–liquid growth mechanism is investigated to optimize the field emission of ZnO nanowires with a maximum current of 12.54 mA. The fabricated X‐ray source exhibits an operating voltage of 39 kV, a dose rate of 240 μGyair s−1, and an imaging resolution of 2.8 lp mm−1, demonstrating their promising use in a variety of applications. Curved or spherical X‐ray sources are significant for use in intraoperative radiotherapy, adaptive static medical imaging, and high‐throughput industrial inspection, but they are hard to achieve using traditional thermionic cathode point electron sources. In this study, copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on a brass substrate with a designed shape are proposed to achieve cold cathode hemispherical X‐ray sources. The strain‐driven solid–liquid growth model of Cu‐doped ZnO nanowires is proposed, and the oxidation temperature‐dependent and time‐dependent growth characteristics are investigated to optimize the morphologies of ZnO nanowire cold cathodes with a typical turn‐on field of 7.36 MV m−1, a maximum current of 12.54 mA (4.93 mA cm−2) and a uniform field emission image with an area of 2.54 cm2. Hemispherical X‐ray sources formed by Cu‐doped ZnO nanowire field emitters grown on spherical brass alloy and an Al thin film transmission anode target deposited on a hemispherical quartz glass are successfully fabricated, achieving an operating voltage of 39 kV, a dose rate of 240 μGyair s−1 and a projection X‐ray imaging resolution of 2.8 lp mm−1, demonstrating their promising use in a variety of applications.

ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources

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