Abstract:Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene 1,2,3 , hexagonal boron nitride (hBN) 4,5,6 and transition metal dichalcogenides 7,8 have been grown. hBN is considered to be the 'ideal' dielectric for 2D-materials-based field-effect transistors (FETs), offering the potential for extending Moore's law 9,10 . Although hBN thicker than a monolayer is more desirable as substrate for 2D semiconductors 11,12 , highly uniform and single-crystal multilayer hBN growth has yet to be demonstrated. Here we report the epitaxial growth of wafer-scale single-crystal trilayer hBN by a chemical vapour deposition (CVD) method. Uniformly aligned hBN islands are found to grow on single-crystal Ni (111) at early stage and finally to coalesce into a single-crystal film. Cross-sectional transmission electron microscopy (TEM) results show that a Ni 23 B 6 interlayer is formed (during cooling) between the single-crystal hBN film and Ni substrate by boron dissolution in Ni. There are epitaxial relationships between hBN and Ni 23 B 6 and between Ni 23 B 6 and Ni. We also find that the hBN film acts as a protective layer that remains intact during catalytic evolution of hydrogen, suggesting continuous single-crystal hBN. This hBN transferred onto the SiO 2 (300 nm)/Si wafer acts as a dielectric layer to reduce electron doping from the SiO 2 substrate in MoS 2 FETs. Our results demonstrate high-quality single-crystal multilayered hBN over large areas, which should open up new pathways for making it a ubiquitous substrate for 2D semiconductors.

Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

Growth and Etching of Centimeter-Scale Self-Assembly Graphene–h-BN Super-Ordered Arrays: Implications for Integrated Electronic Devices

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Epitaxial growth of single-domain graphene on hexagonal boron nitride

Synthesis of Large-Scale Undoped and Nitrogen-Doped Amorphous Graphene on Mgo Substrate by Chemical Vapor Deposition