Abstract:High saturation magnetization and high resistivity are simultaneously achieved in high‐quality single crystal epitaxial high‐entropy (CrMnFeCoNi)3O4 films, far outperforming the current ferrimagnetic insulator materials including traditional spinel and perovskite films. Equally important is the thickness‐induced antiferromagnetic rock‐salt phase gives rise to the easy magnetic axis switched from the in‐plane to out‐plane directions. Ferrimagnetic insulator materials are the enabling technology for the development of next‐generation magnetic devices with low power consumption, high operation speed, and high miniaturization capability. To achieve a high‐density memory device, a combined realization of robust saturation magnetization (Ms), controllable magnetic anisotropy, and high resistivity (ρ) are highly demanded. Despite significant efforts that have been made recently, simultaneously achieving significant enhancements in these properties in a soft magnetic insulator material still remains a great challenge, severely limiting their practical application. Herein, a high‐entropy strategy in an ultra‐thin spinel ferrite (CrMnFeCoNi)3O4 film is reported that exhibits concurrently a superior saturation magnetization (MS = 1198 emu cm−3), low coercivity (HC = 90 Oe), and excellent resistivity (ρ = 1233 Ω cm), as well as switchable magnetic anisotropy. The comprehensive lattice probing and microstructure analysis studies reveal that such desirable ferromagnetic properties originate from the high‐quality structurally ordered but compositionally disordered single‐crystal epitaxial structure. The switchable magnetic anisotropy demonstrated in the high‐entropy ferrite film can be attributed to the new antiferromagnetic rock‐salt phase. This work unveils the critical benefits of the high‐entropy strategy for magnetic oxide thin films, which opens up new opportunities for the development of high‐performance magnetic materials.

Robust Ferrimagnetism and Switchable Magnetic Anisotropy in High‐Entropy Ferrite Film

Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films

Coexistence of Low Damping and Strong Magnetoelastic Coupling in Epitaxial Spinel Ferrite Thin Films

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Spin Switching and Magnetocaloric Effect of High-entropy Orthoferrite Single Crystal

Crystalline Magnetic Anisotropy in High Entropy (Fe, Co, Ni, Cr, Mn)3O4 Oxide Driven by Single‐Element Orbital Anisotropy

Intrinsic Magnetocrystalline Anisotropy Induced 3m -Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films

Spin-Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping

Emergent high-temperature insulating ferromagnetism in Sr4Fe5CoO13- δ epitaxial thin films

Multi-Level Switching of Spin-Torque Ferromagnetic Resonance in 2D Magnetite

Native Oxidation and Complex Magnetic Anisotropy‐Dominated Soft Magnetic CoCrFeNi‐Based High‐Entropy Alloy Thin Films

Magnetic anisotropy in single crystal high entropy perovskite oxide La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films

Magnetic phase transition and continuous spin switching in a high-entropy orthoferrite single crystal

Spin‐Orbit Torque Switching of Magnetization in Ultra‐Thick Ferromagnetic Layers (Adv. Funct. Mater. 42/2024)

High efficient field-free magnetization switching via exchange bias effect induced by antiferromagnetic insulator interface

Large electric-field-induced magnetization change in Fe3O4 thin film based on resistance switching effect

Use of Mesoscopic Host Matrix to Induce Ferrimagnetism in Antiferromagnetic Spinel Oxide

Robust Ferrimagnetism and Ferroelectricity in 2D Ε-Fe2o3 Semiconductor with Ultrahigh Ordering Temperature

Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction