Abstract:At present, a great deal of interest is observed in devices based on two-dimentional (2D) materials, especially graphene, in the field of micro- and nanoelectronics. Graphene has robust hoheycomb lattice structure and unique properties such as ambipolarity, high carrier mobility, high conductivity. Nevertheless the properties of mono- and bilayer graphene are different. A significant difference in electrical characteristics of field-effect transistors (FETs) based on mono- and bilayer graphene was shown in few experimental works [1-3]. Note, that FET on bilayer graphene has demonstrated improved characteristics in comparison to FET on monolayer graphene [1,4,5]. Therefore a necessity to create models specifically for FETs on bilayer graphene appears. A tunable band gap is observed in the FET, when a perpendicular electrical field is applied to the bilayer graphene channel [6]. In the paper a quantum drift-diffusion model of FETs based on bilayer graphene is proposed. The model is a combination of electrical and physical models [7]. The mechanism of carrier transport along the bilayer graphene channel is considered. The electrostatic potential of the transistor channel is defined according to the band gap. Simulation of graphene dual-gate FET with channel length 4 µm is performed using the proposed model. Calculation of electrostatic potential of the investigated device structure was carried out. A good agreement with experimental data has been obtained for output characteristics of FETs based on monolayer graphene [8] using the developed model for this case. Different design parameters of FETs such as channel length, channel width, thickness of top- and back-gate dielectrics are used in the models. The proposed models of different FETs were included in the nanoelectronic devices simulation system NANODEV [9] developed at the BSUIR since 1995.

Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor

Design of bilayer graphene nanoribbon tunnel field effect transistor

Monolayer graphene/hexagonal boron nitride heterostructure

Characterization of a graphene-hBN superlattice field effect transistor

Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene

High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

BN-embedded monolayer graphene with tunable electronic and topological properties

Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Embedded Boron Nitride Domains In Graphene Nanoribbons For Transport Gap Engineering

Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (adv. Mater. 10/2014)

The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon