Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Flat-lens focusing of electrons on the surface of a topological insulator

Flat Optical Lens by Use of 90-Degree Volume Holographic Grating Recording Geometry and Nonvolatile Thermal Fixing in LiNbO3:Fe Crystal

Ultrathin double-focusing topological insulator lens

The focusing effect of electron flow and negative refraction in three-dimensional topological insulators

Field-Effect Birefringent Spin Lens in Ultrathin Film of Magnetically Doped Topological Insulators

Micro-metric Electronic Patterning of a Topological Band Structure Using a Photon Beam

Three-dimensional topological photonic crystal with a single surface Dirac cone

Creating and Steering Highly Directional Electron Beams in Graphene

Lightwave-driven electrons in a Floquet topological insulator

Reversible engineering of topological insulator surface state conductivity through optical excitation

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Veselago focusing of anisotropic massless Dirac fermions

Stable topological insulators achieved using high energy electron beams

Low-energy modeling of three-dimensional topological insulator nanostructures

Deep‐Subwavelength Resonant Meta‐Optics Enabled by Ultra‐High Index Topological Insulators

Electromagnetic-dual metasurfaces for topological states along a one-dimensional interface

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Broadband and Tunable-Focus Flat Lens with Dielectric Metasurface

Exact analysis of a Veselago lens in the quasi-static regime

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface