Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

The focusing effect of electron flow and negative refraction in three-dimensional topological insulators

Simultaneous Electrical-Field-effect Modulation of Both Top and Bottom Dirac Surface States of Epitaxial Thin Films of Three-Dimensional Topological Insulators.

Three-dimensional Photonic Topological Insulator Without Spin–orbit Coupling

Quantum Transport Through Three-Dimensional Topological Insulator P-N Junction under Magnetic Field

Surface Edge State and Half-Quantized Hall Conductance in Topological Insulators

Spin and Momentum Filtering of Electrons on the Surface of A Topological Insulator

Magnetically Confined States and Transport Property on the Surface of a Topological Insulator

Enhanced Electron Dephasing in Three-Dimensional Topological Insulators

Transport in three-dimensional topological insulators: theory and experiment

Electron Transport Properties of Three-Dimensional Topological Insulators

Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Electron behavior in topological insulator based P-N overlayer interfaces

Majorana fermions, Andreev reflection and magnetoresistance effect in three-dimensional topological insulators

Magnetic proximity effect in the 3D topological insulator/ferromagnetic insulator heterostructure

In-plane Magnetic Field Induced Helicity Dependent Photogalvanic Effect on the Surface States of Topological Insulators (Bixsb1−x)2te3

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Electronic Transport in Ferromagnetic Barriers on the Surface of a Topological Insulator with Δ Doping

Electronic structure of three-dimensional topological insulators: thickness dependence and warping effect

Magnetotransport of Dirac Fermions on the surface of a topological insulator