Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Low-energy modeling of three-dimensional topological insulator nanostructures

Low-energy modeling of three-dimensional topological insulator nanostructures

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Model Hamiltonian for Topological Insulators

Topology of Bi$_2$Se$_3$ nanosheets

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Emergence of Bulk Band Inversion in the Nanodomain and Relaxation Effects on the Surface States of the Bi2Se3 Topological Insulator Family

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Two-dimensional Lattice Model for the Surface States of Topological Insulators

First Principles Modeling of Topological Insulators: Structural Optimization and Exchange Correlation Functionals

Understanding the Finite Size and Surface Relaxation Effects on the Surface States of Bi2Se3 Family Topological Insulators

A computational investigation of topological insulator Bi2Se3 film

Micro-metric Electronic Patterning of a Topological Band Structure Using a Photon Beam

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Tunable Dirac Fermion Dynamics in Topological Insulators

Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Emergence of Band Inversion in the Nanodomain and Relaxation Effects on the Surface States of the Bi2Se3 Topological Insulator Family

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Electronic Structure Near an Impurity and Terrace on the Surface of A Three-Dimensional Topological Insulator