Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications
Shun‐Chang Liu,Yang Mi,Ding‐Jiang Xue,Yao‐Xuan Chen,Chao He,Xinfeng Liu,Jin‐Song Hu,Li‐Jun Wan,Shun-Chang Liu,Ding-Jiang Xue,Yao-Xuan Chen,Jin-Song Hu,Li-Jun Wan
DOI: https://doi.org/10.1002/aelm.201700141
IF: 6.2
2017-06-23
Advanced Electronic Materials
Abstract:GeSe is a promising absorber material for photovoltaic applications due to its attractive material, optical, and electrical properties as well as its low toxicity and earth abundance. The first GeSe‐based solar cell with 1.48% efficiency has been recently reported through self‐regulated rapid thermal sublimation. However, most of the fundamental physical and electronic properties of GeSe such as refractive index, dielectric constant, carrier mobility, lifetime, and diffusion length remain unclear, despite the necessity of this for the design of high‐performance GeSe solar cells. In this work, the above basic properties of GeSe are systematically studied by using spectroscopic ellipsometry, space charge limited current measurements, and transient absorption spectroscopy. These comprehensive results provide a solid foundation for the further development of GeSe solar cells. The basic physical and electronic properties of GeSe, including refractive index, dielectric constant, carrier mobility, lifetime, and diffusion length, are systematically studied by using spectroscopic ellipsometry, space charge limited current measurement, and transient absorption spectroscopy, thus providing a solid foundation for the further development of GeSe solar cells.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology