Investigating the Performance of Lead-Free Perovskite Solar Cells Using Various Hole Transport Material by Numerical Simulation

Vaibhava Srivastava,R. K. Chauhan,Pooja Lohia

DOI: https://doi.org/10.1007/s42341-022-00412-w

2022-08-05

Transactions on Electrical and Electronic Materials

Abstract:This work is reporting a numerical simulation of the solar cell structure, FTO/PCBM/CsSn 0.5 Ge 0.5 I 3 /Spiro-OMeTAD/Au. Basically, cesium-based perovskite CsSn 0.5 Ge 0.5 I 3 have been introduced as absorber layer separately due to its better stability and enhanced optical properties. In the same cell structure, PCBM and Spiro-OMeTAD are incorporated as electron transport layer and hole transport layer respectively. Spiro-OMeTAD has been used in place of different hole transport layer after rigorous analysis of their properties. The parameters of MoO 3 based devices such as thickness, bandgap, defect density of absorber layer and operating temperature have been varied at some extent to obtain the optimum value. The optimized solar cell structure FTO/PCBM/CsSn 0.5 Ge 0.5 I 3 /MoO 3 /Au with power conversion efficiency of 19.09% has been achieved. SCAPS-1D has been used for this simulation works. These idea revels the further improvement in such devices in future.