Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Electronic Coupling Between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties

Fermi-Level Pinning, Charge Transfer, and Relaxation of Spin-Momentum Locking at Metal Contacts to Topological Insulators

Monolayer superconductivity and tunable topological electronic structure at the Fe(Te,Se)/Bi2Te3 interface

Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures

Challenges of Topological Insulator Research: Bi2Te3 Thin Films and Magnetic Heterostructures

Robust topological interface states in a lateral magnetic-topological heterostructure

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Atomic diffusion-induced polarization and superconductivity in topological insulator-based heterostructures

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Realization of monolayer ZrTe5 topological insulators with wide band gaps

Reversible engineering of topological insulator surface state conductivity through optical excitation