Control of the exciton valley dynamics in atomically thin semiconductors by tailoring the environment

A. I. Prazdnichnykh,M. M. Glazov,L. Ren,C. Robert,B. Urbaszek,X. Marie,and X. Marie
DOI: https://doi.org/10.1103/PhysRevB.103.085302
2021-02-06
Abstract:The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenide monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active in the opposite circular polarizations resulting in the longitudinal-transverse splitting of excitons propagating in the monolayer plane. Here we study theoretically the effect of the dielectric environment on the long-range exchange interaction and demonstrate how the encapsulation in hexagonal boron nitride modifies the exciton longitudinal-transverse splitting. We calculate the exciton spin-valley polarization relaxation due to the long-range exchange interaction and demonstrate that the variation of the monolayer environment results in significant, up to fivefold, enhancement of the exciton valley polarization lifetime. https://doi.org/10.1103/PhysRevB.103.085302 ©2021 American Physical Society
What problem does this paper attempt to address?