Abstract:<p>This paper is focused on studying the behavior of a GaAs pseudomorphic high electron mobility transistors (pHEMT) with respect to the temperature. The tested pHEMT is realized using the multilayer three‐dimensional (3‐D) monolithic microwave integrated circuit (MMIC) technology. The analysis is based on temperature‐dependent on‐wafer measurements carried out from 298 K to 373 K. The experiments consist of DC characteristics and scattering parameters in the broad frequency range from 45 MHz to 40 GHz. The effect of the temperature on the measured transistor performance is analyzed in detail and then, to gain a better insight and understanding of the device behavior, the achieved measurements are used for extraction and validation of a small‐signal equivalent‐circuit model for different temperature conditions. This study shows that, by heating the studied device, the observed performance variations depend remarkably on the selected bias condition. In particular, the output current and transconductance are degraded at higher gate‐source voltage and improved as the transistor is driven towards the pinch‐off. This is due to the counterbalancing of temperature‐dependent effects contributing in opposite ways to the resultant behavior of the transistor. Therefore, depending on the given application, an appropriate selection of the bias and temperature conditions is essential to guarantee adequate transistor performance.</p>

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

Electrothermal Effects on Performance of GaAs HBT Power Amplifier During Power Versus Time (PVT) Variation at GSM/DCS Bands

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

Equivalent method of GaAs PHEMT MMIC for thermal simulation

Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature

A New Meshing Criterion for the Equivalent Thermal Analysis of GaAs PHEMT MMICs.

Investigation on Harmonic Spur Characteristics of Hybrid Integrated LDMOS and AlGaN / GaN Power Amplifiers at Different Temperatures

Study on Harmonic Spur Characteristics of AlGaN/GaN HEMT PA at Different Temperatures

A 4 W K-Band Gaas Mmic Power Amplifier With 22 Db Gain

A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Reliability Evaluation with Heat Dissipation Effect for a Ka-band MMIC PA

Study on ESD Effects of GaAs HBT Power Amplifiers for DCS/GSM Dual Band Handsets

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Experimentally Investigating the Performance Degradations of Power Amplifiers Against Temperatures

Electro-Thermal Co-Optimization Design of GaN MMIC PA

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation