Abstract:Sintered silver is a new interconnect material with many advantages, such as low sintering temperature, high thermal conductivity and high service temperature, which can increase the heat dissipation capacity of the silver interconnect layer and enable high power modules to be used for long term service. However, sintered silver tends to form different defects during long-term service, which can affect the module’s thermal capability. In this paper, we prefabricated different sintered silver substrates and used ANSYS Workbench to build a finite element model of the substrates for investigating the effect of the size, distribution and shape of defects in the connection interface on the thermal performance of the module, comparing the size of the thermal resistance of the connection layer between the finite element model and the actual substrate to verify the scientific and reasonable nature of the simulation results. The simulation results show that excessively large defects can seriously affect the heat distribution of the chip, causing an increase in temperature amplitude, and the difference of temperature distribution depending on the location of the defects. The computational analysis shows that as the defect size increases, the thermal conductivity of the connection layer decreases, and these effects eventually lead to an increase in the temperature of the whole module. Finally, the S-parameter network test further reveals the effect of defects on the module. The test results show that an increase in defects leads to an increase in the impedance of the module, and that the resonant frequency also tends to increase with defects. In summary, thermal model simulations for different defect levels are developed and a defect assessment method based on S-parameter analysis is proposed. Our results show that controlling the defect size and distribution is essential to optimise the thermal performance of sintered silver interconnect materials.

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