A Review on MX2 (M = Mo, W and X = S, Se) layered material for opto-electronic devices

Rohit Sharma,Radhapiyari Laishram,Bipin Kumar Gupta,Ritu Srivastva,Om Prakash Sinha
DOI: https://doi.org/10.1088/2043-6262/ac5cb6
2022-05-19
Advances in Natural Sciences: Nanoscience and Nanotechnology
Abstract:After discovering the steppingstone of two-dimensional (2D) materials, i.e. graphene, researchers are keen to explore the world of 2D materials beyond graphene for new frontiers and challenges. Due to bandgap limitation, graphene does not fit for the logic and optoelectronic applications which need well defined on/off ratio. Recently, single-layer (SL) and few-layer (FL) transition metal dichalcogenides have emerged as a new family of layered materials with great interest, not only for the fundamental point of view, but also due to its potential application in ultrathin modern devices. As the transition metal dichalcogenides (TMDs) have a direct bandgap in their single layer, which falls under the visible region of the electromagnetic spectrum and has better physical and chemical properties, making them a suitable candidate for logic and optoelectronic applications. This review includes the recent extensive development on the synthesis and transfer strategies of MX 2 (M = Mo, W and X = S, Se) 2D nanostructures of semiconducting TMDs. Further, this review covers the electronic and optoelectronic applications of these nanostructures along with progress in Van der Waal structures. The advantage and unambiguity of these materials are also discussed.
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