Abstract:Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe2 and TiTe2, a Mott-insulating state in monolayer 1T-TaSe2, and the monolayer specific 2D topological insulator 1T′-WTe2, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe2, the 2D topological insulators of 1T′-MoTe2, and the CDW material 1T-VTe2. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.

Nanostructured Molybdenum Dichalcogenides: A Review

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

A Mini Review: Phase Regulation for Molybdenum Dichalcogenide Nanomaterials

A comprehensive review on synthesis, properties, and applications of quaternary transition metal oxychalcogenides

A Review on MX2 (M = Mo, W and X = S, Se) layered material for opto-electronic devices

2D‐MoX2 (X = S, Se, Te) and Their Nanocomposite Toward Sensing Application: A Review

Two-dimensional transition metal dichalcogenide nanosheet-based composites.

Progress and development on the synthesis and application of two-dimensional molybdenum disulphide

Metal dichalcogenide nanosheets: preparation, properties and applications.

Recent Progress in the Controlled Synthesis of 2D Metallic Transition Metal Dichalcogenides.

Insights on bio-medical, quantum, and optoelectronic applications of 2D transition metal dichalcogenides–a review

Review—Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges

A review of the synthesis, properties, and applications of 2D transition metal dichalcogenides and their heterostructures

Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications

Advances in two‐dimensional molybdenum ditelluride (MoTe2): A comprehensive review of properties, preparation methods, and applications

Synthesis and Characterization of 2D Transition Metal Dichalcogenides: Recent Progress from a Vacuum Surface Science Perspective

A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te)

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications