Advances in Physics and Chemistry of Transition Metal Dichalcogenide Janus Monolayers: Properties, Applications, and Future Prospects
Rajneesh Chaurasiya,Shubham Tyagi,Abhijeet J. Kale,Goutam Kumar Gupta,Rajesh Kumar,Ambesh Dixit
DOI: https://doi.org/10.1002/adts.202400854
2024-11-11
Advanced Theory and Simulations
Abstract:This review paper highlights the Advances in Physics and Chemistry of recently experimentally demonstrated Transition Metal Dichalcogenide Janus Monolayers. Numerous ways to tailor the physical and chemical properties, such as strain, defects, heterostructures, and electric fields, are discussed in detail. Moreover, next‐generation devices such as sensors, thermoelectrics, energy storage, catalysis, solar cells, and field effect transistors are discussed in detail. Janus transition metal dichalcogenides (JTMDs) have garnered significant interest from the scientific community owing to their remarkable physical and chemical features. The existence of intrinsic dipoles makes them different from conventional transition metal dichalcogenides. These properties are useful in various potential applications, including energy storage, energy generation, and other electronic devices. The JTMDs are considered a hot topic in two dimensional (2D) materials research, making it necessary to understand their fundamental properties and potential use in various applications. This review covers the fundamental difference between Janus and conventional transition metal dichalcogenide‐based 2D materials. This discussion encompasses the characteristics of monolayer, bilayer, and multilayer materials, focusing on their structural stability, electronics properties, optical properties, piezoelectricity, and Rashba effects. The impact of external stimuli such as strain and electric field toward engineering the ground state properties of monolayer JTMDs is discussed. Additionally, various potential applications of Janus monolayers, including gas sensors, catalysis, electrochemical energy storage, thermoelectric, solar cells, and field effect transistors, are highlighted, emphasizing enhancing their performance. Finally, the prospects of Janus 2D materials for next‐generation electronic devices are highlighted.
multidisciplinary sciences