Abstract:Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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Observation Of Gain Operation Mode In Ge:B Bib Thz Detector

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Impact of the Structural Parameters on the Photoresponse of Terahertz Blocked-Impurity-Band Detectors with Planar Structure

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Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Development of long-wavelength infrared detector and its space-based application requirements

Comparison of Photoresponse of Si-Based Bib Thz Detectors

Optimized Si-Based Blocked Impurity Band Detector under Alternative Operational Mode

Blocking Layer of Dark Current for Si-based Short-Wave Infrared Photodetection

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

The Anti-Reflection Coating Design for the Very-Long-Wave Infrared Si-Based Blocked Impurity Band Detectors

Antimonide-based High Operating Temperature Infrared Photodetectors and Focal Plane Arrays: A Review and Outlook