Abstract:In this study, the doping of deep‐level element sulfur (S) is synergized with the device architecture incorporating a blocked impurity band (BIB) to fabricate an advanced infrared detector. The S‐doped Si (Si:S) BIB detector exhibited excellent short‐wave infrared detection performance. The multi‐scenario application demonstrations further confirmed its potential for practical use. Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 μm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped Si‐based infrared photodetector featuring a blocked impurity band (BIB) structure is investigated. The detector achieves an extended sub‐bandgap infrared response up to 2 μm through impurity band transitions, facilitated by the artificial creation of a deep‐level impurity band within the Si bandgap. The device exhibited a competitive photodetection effect with a high responsivity of 107.3 mA W−1 and an external quantum efficiency of 10.2%. Notably, the detector yielded an enhanced response speed with a raising time of 46 μs and a decay time of 135 μs at 1310 nm under room temperature. Finally, the versatile applications of this detector is presented in a multitude of scenarios encompassing material composition identification, multi‐band imaging, and optical communication. The proposed investigation not only proposed a method for Si‐based infrared detectors but also constituted a contribution to the advancement of silicon photonics.

Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors

High-operating temperature far-infrared Si:Ga blocked-impurity-band detectors

Dark-Current-Blocking Mechanism in BIB Far-Infrared Detectors by Interfacial Barriers

Comparison of Photoresponse of Si-Based Bib Thz Detectors

Ge-based Mid-Infrared Blocked-Impurity-band Photodetectors

Blocked Impurity Band Very Long Wavelength Infrared Detector

Observation Of Gain Operation Mode In Ge:B Bib Thz Detector

Optimized Si-Based Blocked Impurity Band Detector under Alternative Operational Mode

The Research Progress of Si-based Blocked-Impurity-band Infrared Detecting Materials and Detectors

Impact of the Structural Parameters on the Photoresponse of Terahertz Blocked-Impurity-Band Detectors with Planar Structure

The Anti-Reflection Coating Design for the Very-Long-Wave Infrared Si-Based Blocked Impurity Band Detectors

Uniformly Broadband Far-Infrared Response From the Photocarrier Tunneling of Mesa Si:P Blocked-Impurity-Band Detector

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

The Effect of Infrared Plasmon on the Performance of Si-based THz Detectors

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Surface Plasmon Enhanced Si-Based Bib Terahertz Detectors

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Experimental and theoretical research on noise behaviors of epitaxial Si:P blocked-impurity-band detectors

Ultra-broadband and High Response of the Bi2Te3-Si Heterojunction and Its Application As a Photodetector at Room Temperature in Harsh Working Environments.

Blocking Layer of Dark Current for Si-based Short-Wave Infrared Photodetection

Ge-based Triple-Band Infrared Photodetector