Effect of a Cu2O buffer layer on the efficiency in p-Cu2O/ZnO hetero-junction photovoltaics using electrochemical deposition processing

Leo Chau-Kuang Liau,Cheng-Hao Tang
DOI: https://doi.org/10.1007/s10800-022-01724-8
IF: 2.925
2022-08-24
Journal of Applied Electrochemistry
Abstract:Herein, we designed and fabricated photovoltaic (PV) devices with optimal efficiency of Cu 2 O buffer layers (p-Cu 2 O/n-Cu 2 O/ZnO and p-Cu 2 O/p − -Cu 2 O/ZnO) through electrochemical deposition (ECD) processing. PV devices with two types of buffer layers, n-Cu 2 O and p − -Cu 2 O, were produced by ECD and consisted of a layer of nanorod ZnO on ITO, an n-Cu 2 O or a p − -Cu 2 O buffer layer, a p-Cu 2 O layer, and a sputtered Ag layer. Results revealed that the interface between the ZnO film and the Cu 2 O buffer, and thickness of the buffer layer were crucial factors to affect PV device performance. The nanorod structure of ZnO transformed into a flake structure during the ECD of n-Cu 2 O on ZnO. However, ZnO retained the same morphology during the ECD of p − -Cu 2 O on ZnO. The optimal thicknesses of the Cu 2 O buffer in the PV device were obtained to enhance the PV efficiency from 0.046 (p-Cu 2 O/ZnO) to 0.17% (p-Cu 2 O/p − -Cu 2 O/ZnO). The p-Cu 2 O/ZnO PV performance was improved through the fabrication and incorporation of Cu 2 O buffers.
electrochemistry
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