Abstract:Unit‐cell‐thickness 2D electron confinement is realized through geometrically constrained antipolar ordering in metallic SrFeO3. Revealed by atomic resolution electron microscopy and density functional theory, electrons are confined two‐dimensionally to screen the positive bound charges on head‐to‐head antipolar phase boundaries. Meanwhile, oxygen vacancies segregated into planar faults compensate the negative bound charges on the tail‐to‐tail ones, stabilizing the antipolar ordering state. Achieving precise electron or spin confinement is essential for the progress of oxide electronics and emerging quantum information processing. While 2D electron confinement is commonly achieved with bare surfaces, heteroepitaxial interfaces, and charged domain walls, its practical application poses challenges, notably by diverse confinement widths, limited material selection, and the lack of freedom of positioning to a desired location within a given material system. Here, with scrutinizing a novel defect structure, the study suggests a new strategy with compelling evidence to trigger electron confinement down to single unit‐cell‐thickness, through geometrically constrained antipolar ordering facilitated by superlattice‐like periodic planar faults in metallic SrFeO3. Employing atomic resolution electron microscopy and density functional theory, the results demonstrate that electrons are confined two‐dimensionally to screen the positive bound charges on head‐to‐head antipolar state boundary, meanwhile oxygen vacancies segregated in the planar faults compensate the negative bound charges on the tail‐to‐tail one, leading to the stabilization of the antipolar ordering. Additionally, distinguished from traditional methods, this approach offers a potential programing capability for achieving precise charge and spin control by regulating planar fault structure at atomic scale.

Electron Trapping and Detrapping in an Oxide Two-Dimensional Electron Gas: The Role of Ferroelastic Twin Walls

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Unveiling Temperature-Induced Structural Domains and Movement of Oxygen Vacancies in SrTiO 3 with Graphene

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Polaronic Trions Induced by Strong Interfacial Coupling in Monolayer WSe2

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Oxide tunnel junctions supporting a two-dimensional electron gas

Observation of zero-field transverse resistance in AlO$_x$/SrTiO$_3$ interface devices

Out-of-plane interface dipoles and anti-hysteresis in graphene-strontium titanate hybrid transistor

Distinct differences in surface transport between electrolyte-gated (110) and (001) SrTiO3

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Unit‐Cell‐Thickness Electron Confinement by Geometrically Constrained Antipolar Ordering

Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO$_3$/SrTiO$_3$ and LaAlO$_3$/SrTiO$_3$ Interfaces

Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface