Abstract:Light detection and ranging (LiDAR) is the most important active remote sensing tool and is widely used in civilian and military fields. There are a number of methods to drive laser diodes; the most common circuit topologies are capacitor-discharge resonant circuits. However, the performance of the silicon (Si)-based switching device limits the development of Light detection and ranging, such as the large figure of merit (FOM) and the stray inductance. Although different methods have been reported to resolve these problems, there are still great challenges in reducing the pressure on Light detection and ranging driver design. Hence, this work presents a gallium nitride (GaN)–Si hybrid integrated driver for a Light detection and ranging system. In the circuit, the switching power device uses GaN instead of a Si-based device, because GaN enables much better performance for pulsed-laser operation due to its near-ideal switching performance. Furthermore, a GaN push–pull driver stage between the GaN power device and the Si-based driver integrated circuit (IC) was innovatively introduced, which is integrated in the same chip with the GaN power device, thereby effectively reducing the parasitic parameters of the signal chain and enhancing the system reliability. The design and implementation of the Si-based IC and GaN IC are based on 0.18 μm 80–120 V Bipolar-CMOS-DMOS (BCD) technology and 0.5 μm p-GaN technology, respectively. The experimental results suggest that the proposed driver circuit output pulse width is 12.6 ns, and it can normally operate at 10 MHz with turn-on/turn-off delay is 11.94 ns. In addition, the driver was capable of generating approximately 8.25 A current pulses through a low ohmic load with a pulse width of approximately 12.4 ns. This work plays a vital role in promoting the development of information equipment and aerospace equipment such as precise ranging, high-efficiency power supplies, and high-speed motors.

Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A Digital PWM Controller of MHz Active Clamp Flyback with GaN Devices for AC-DC Adapter.

Study of Equivalent Circuit of GaN Based Laser Chip and Packaged Laser

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Stability improvement of high-power semiconductor laser diode regulators used in infrared solid-state laser applications

A GaN–Si hybrid integrated driver for narrow-pulse and high-current LiDAR applications

A Load-Adaptive Driving Method for a Quasi-Continuous-Wave Laser Diode

Design and Implementation of a Power Semiconductor-Based Switching Mode Laser Diode Driver

20.3 A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Optical-mode study of galium nitrate based laser diodes

Digital Synchronous Rectifier Control Using Extended Harmonics Impedance Model for High-Frequency GaN-Based LLC Converters

Down-scaling of GaN-based Laser Diodes for High-Speed Modulation Characteristics

Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

GaN HBT: toward an RF device