Photo Effect Studies in Graphene/N-GaAs Schottky Junction Using NEGF Method for Photovoltaic Application

Md Azmot Ullah Khan,Naheem Olakunle Adesina,Jian Xu
DOI: https://doi.org/10.4028/www.scientific.net/KEM.907.24
2022-01-21
Key Engineering Materials
Abstract:Publication date: 21 January 2022 Source: Key Engineering Materials Vol. 907 Author(s): Md Azmot Ullah Khan, Naheem Olakunle Adesina, Jian Xu In this paper, we present the photovoltaic characteristics of nanoscale Schottky junction solar cell consisting of graphene and GaAs using numerical simulation based on non-equilibrium Green's function formalism. In our model, light-matter interaction is formulated by the coupling and scattering self-energy matrices whereas heterostructure is designed with a Hamiltonian matrix. An efficiency of 2.36% is obtained for monolayer graphene on GaAs; the efficiency is later enhanced to 5.40% by increasing both the number of graphene layers and the doping concentration of GaAs. The parameters to calculate power conversion efficiency, series and shunt resistances are extracted from the J-V characteristic. The I-V characteristic is also numerically simulated to extract reverse saturation current, ideality factor, and rectification ratio. Moreover, the power density is calculated for the optimized structure; the maximum power density of 7.46 mW/cm2 is obtained for four layers of graphene and a doping concentration of 1017/cm3 in GaAs.
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