Abstract:In this manuscript, carrier transport simulation methods are proposed for devices with the coexistence of quantum transport and diffusive transport by combining the nonequilibrium Green's function method with the drift-diffusion transport simulation method. Current continuity between quantum transport and drift-diffusion transport is ensured by setting quantum transport current as the connection boundary condition of drift-diffusion simulation or by introducing quantum transport-induced carrier generation rates to drift-diffusion simulation. A comprehensive study of our method and the method combining the Wentzel–Kramers–Brillouin (WKB) method with the drift-diffusion transport simulation method is performed for n-type tunnel oxide passivating contact solar cell to investigate their applicable conditions and balance the accuracy and computational cost. As the oxide barrier width, barrier height, and electron effective mass increase, or the doping concentration in the electron transport layer decreases to the extent that the blocking effect of the oxide barrier on light-generated electrons becomes significant, method I is more accurate since the transmission coefficient near the conduction band edge calculated by WKB is overestimated; otherwise, method II is more suitable due to its low computational cost without the loss of accuracy. In addition, the differences between current densities, carrier densities, and Shockley–Read–Hall recombination rates simulated under the two current continuity conditions for the solar cell with different carrier mobilities are also further explored and analyzed.

Simulation of Graphene-Gaas Schottky Junction Solar Cell with Graphene Gate by Finite Difference Method

Modeling and Simulation of Graphene-Gated Graphene-Gaas Schottky Junction Field-Effect Solar Cell for Its Performance Enhancement

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Calculation of Electron Transport in Gaas Nanoscale Junctions Using First-Principles

Efficient Simulation of Tunable Graphene-Based Frequency Selective Surfaces (GFSS) with an Improved HIE-FDTD Method

Study on tunable periodic graphene split-ring resonator (GSRR) structures using FDTD method

Photo Effect Studies in Graphene/N-GaAs Schottky Junction Using NEGF Method for Photovoltaic Application

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Modeling and simulation of Si/PEDOT:PSS planar heterojunction photovoltaics by finite element method

Efficient Modeling and Simulation of Graphene Devices With the LOD-FDTD Method

High-performance Thin-Film Solar Solar Cells Based on AlGaAs/GaAs Heterojunction and Localized Surface Plasmon Oscillations

Investigation of graphene-based Schottky junction solar cell with heavy-doped silicon

Performance Limiting Factors and Efficiency Improvement Methods of Graphene/n-Si Schottky Junction Solar Cell

Analysis of leakage current in GaAs micro-solar cell arrays

Graphene-On-Silicon Schottky Junction Solar Cells

Optimization of Graphene/silicon Heterojunction Solar Cells

High performance solar cells based on graphene-GaAs heterostructures

Graphene/Semiconductor Heterojunction Solar Cells with Modulated Antireflection and Graphene Work Function

Atomic-Scale Tuning of Graphene/Cubic SiC Schottky Junction for Stable Low-Bias Photoelectrochemical Solar-to-Fuel Conversion

18.5% Efficient Graphene/gaas Van Der Waals Heterostructure Solar Cell

Effect Of Gainp Lattice Microstructure On The Algaas/Gainp Tunneling Diode In Gainp/Gaas/Ge Triple-Junction Solar Cell