Abstract:Specific features in magnetotransport properties due to gradual forming the topological insulator state in sample of single-crystalline n-type Bi2Te2.7Se0.3 during its cooling were analyzed. The electrical resistivity of sample, measured from 2 K to 240 K, corresponds to partially degenerate semiconductor and dominantly depends on T-effect on electron mobility. The moblity is governed by electron-phonon scattering above TC=50K, whereas below TC electron-electron scattering is dominant scattering mechanism. With increasing temperature, electron content linearly increases above TC, whereas below TC electron content is very weakly T-dependent. Transverse magnetoresistance of sample is positive and strongly T-dependent. Two features, which are characteristic for topological insulators, were found in the magnetoresistance. First feature is a crossover from quadratic to linear magnetoresistance, observed within TC < T <240 K range. Crossover field BC decreases with decreasing temperature. Linear magnetoresistace is quantum one that can be due to presence of Dirac fermions, which occupy the lowest Landau level under magnetic field. Second feature is another crossover from combined quadratic-linear to dip-shaped magnetoresistrance, observed at T ≤ TC . Dip-shaped magnetoresistrance is related to weak antilocalization (WAL) phenomenon. The WAL phenomenon and the electron-electron scattering process coexist at the same temperature range. Dip-shaped magnetoresistrance was analysed by in frames of the Hikami-Larkin-Nagaoka model, developed for systems with strong spin-orbit coupling. At cooling below ~ 30 K, the effective dephasing length rapidly increases that is dominantly related to the electron-electron scattering process, too. The parameter α, characterizing the number of conduction channels, contributing to electron transport, is close to 0.5. This value α corresponds to a single topologically non-trivial conduction channel.

Size Effect in the Electrical Conductivity of Thin Films of Topological Insulator Bi2Se3

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example

Understanding the Finite Size and Surface Relaxation Effects on the Surface States of Bi2Se3 Family Topological Insulators

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Thermopower and resistivity of the topological insulator Bi 2 Te 3 in the amorphous and crystalline phase

Imaging current distribution in a topological insulator Bi2Se3 in the presence of competing surface and bulk contributions to conductivity

Topological phases of topological insulator thin films

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Tuning Thermoelectricity in A Bi2se3 Topological Insulator Via Varied Film Thickness

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

A computational investigation of topological insulator Bi2Se3 film

Temperature evolution of transverse magnetoresistance due to forming the topological insulator state in single-crystalline n-type Bi2Te2.7Se0.3

Topological Effects on the Magnetoconductivity in Topological Insulators

Chern Number of Thin Films of the Topological Insulatorbi2se3

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

Temperature-dependent terahertz conductivity of topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$

Bulk transport properties of Bismuth selenide thin films approaching the two-dimensional limit

Studies on proximity effect in Mo/Bi1.95Sb0.05Se3 hybrid structure

Interplay between topological insulators and superconductors