Abstract:Piezoelectric semiconductor (PS) materials are widely used in the modern flexible, self-powered and wearable devices due to both of piezo-effect and semiconduction property. As well known, the interfacial properties play a key role in these devices and can be effectively tuned by the strain engineering (SE). However, many interesting phenomena of interfacial properties are still unrevealed due to the unopened potential barrier zone, such as the revolution laws of the interfacial barrier configuration corresponding to applied strains. In this study, a composite structure composed of a thin piezoelectric PN junction locally pasting over an electrically insulating wafer, such that the deformation will be transferred to the junction after the wafer subjecting to the external loads. Then, the matching laws between the non-uniform electromechanical fields and carriers are revealed by clarifying the interaction mechanisms among the deformation, electric polarization, and carriers in a piezoelectric PN junction. Based on a non-depletion-layer model, it is observed that the interfacial potential barrier configurations are effectively reconstructed by the surface-polarized charges at loading boundaries induced by discontinuous electric polarizations and piezoelectric charges in the volume induced by non-uniform strains. It is also found that the limitation of further optimization of the output performance of piezoelectric PN junctions is the carrier-type inversion. Thus, the optimization of the distribution of piezoelectric charges is carried out to suppress the excessive carrier-type inversion for a greater current density amplification factor. Besides, it is also found that the maximum current density amplification factor is commonly not shown with an optimal Gauge factor simultaneously. Obviously, the present study possesses referential significance to design high-performance piezotronic devices.

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