High output nanogenerator based on assembly of GaN nanowires.

Long Lin,Chen-Ho Lai,Youfan Hu,Yan Zhang,Xue Wang,Chen Xu,Robert L Snyder,Lih-J Chen,Zhong Lin Wang

DOI: https://doi.org/10.1088/0957-4484/22/47/475401

IF: 3.5

2011-01-01

Nanotechnology

Abstract:GaN nanowires (NWs) were synthesized through a vapor-liquid-solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2 V and output current density of 0.16 mu A cm(-2). The measured performance of the GaN NGs was consistent with the calculations using finite element analysis (FEA).