Elastic, lattice dynamical, thermal, electronic, and optical properties of nano-semiconductor CdTe under the effect of temperature

Ibtisam F. Al Maaitah,Elkenany Brens Elkenany

DOI: https://doi.org/10.1016/j.cocom.2022.e00640

2022-03-01

Computational Condensed Matter

Abstract:The energy band gaps of CdTe semiconductor material have been determined using the empirical pseudo-potential method (EPM). The refractive index (n), high frequency ( ε ∞ ) and static dielectric constants ( ε s ) of the considered material have been studied. The elastic constants, as well as some associated factors like bulk, (Bu), shear (Cs), Young (Y0) moduli, isotropy factor (A), and Poisson ratio (σ), have been reported for CdTe in zinc blende structure. The longitudinal and transverse phonon frequencies ( ω L O , ω T O ), and Debye temperature ( θ D ) have also been calculated. All of the variables studied have been investigated in terms of their temperature sensitivity. Generally, Our findings are in good agreement with those published in the literature. The studied material could be useful in the fabrication of optoelectronic devices under high temperatures.