Abstract:Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm-1, and Baliga figure of merit of 3300, 3-10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1-x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.

β-Ga2O3 material properties, growth technologies, and devices: a review

β‐Gallium Oxide Devices: Progress and Outlook

Beta-Gallium Oxide Material and Device Technologies

A review of the most recent progresses of state-of-art gallium oxide power devices

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

A Review of β-Ga2O3 Power Diodes

β-Ga2O3-Based Power Devices: A Concise Review

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Epitaxial Growth of Ga2O3: A Review

Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

State-of-the-art technologies of gallium oxide power devices

Development of gallium oxide power devices

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

A Review of β-Ga<sub>2</sub>O<sub>3</sub> Power Diodes

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014)

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

A Review of gallium oxide-based Power Schottky barrier diodes

Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective