Abstract:As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7–4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to explore the research progress of β -Ga₂O₃ power diodes and their applications in different structures. Specifically, the paper focuses on the following aspects:
1. **Material Properties and Preparation**:
- Firstly, the paper introduces the crystal structure, growth methods of β -Ga₂O₃, and its excellent electrical properties, such as wide bandgap (4.7–4.9 eV), high critical electric field strength (8 MV/cm), and high Baliga's figure - of - merit (BFOM, 3444). These properties make β -Ga₂O₃ have great potential in the field of power devices.
- It discusses in detail the growth techniques of β -Ga₂O₃ single - crystal substrates, including the Czochralski method (CZ), the optical floating - zone method (OFZ), the vertical Bridgman method (VB), and the edge - defined film - growth method (EFG), among which the EFG method is considered the most mature and cost - effective method.
2. **Metal/β -Ga₂O₃ Contact**:
- It introduces the basic structure of β -Ga₂O₃ Schottky barrier diodes (SBDs), which are composed of β -Ga₂O₃, anodic Schottky contact, and cathodic ohmic contact.
- It deeply discusses the formation mechanisms of Schottky contact and ohmic contact, especially the influencing factors of Schottky barrier height (SBH), including metal work function, interface states, and high - temperature performance.
- It mentions some methods found in experiments to effectively reduce the surface - state density, such as oxygen plasma treatment, annealing, and chemical - solution cleaning.
3. **β -Ga₂O₃ Power Diodes with Different Structures**:
- The paper summarizes the research progress of β -Ga₂O₃ power diodes with different structures, which are mainly divided into three categories: vertical - structure SBDs, vertical - heterojunction - structure diodes, and lateral - structure diodes.
- For vertical - structure SBDs, it focuses on how to improve the breakdown voltage (BV) and overall device performance by introducing field plates (FPs), edge terminations (ET), mesa terminations (MT), and trench structures.
- It emphasizes the importance of device performance parameters, especially the breakdown voltage (BV), on - resistance (R_on), and their derived power figure - of - merit (PFOM), which reflect the potential of the device in power - circuit applications.
4. **Thermal Management and Circuit Applications**:
- It briefly introduces the thermal management and circuit applications of β -Ga₂O₃ power diodes, including surge - current robustness and reliability.
In summary, this paper aims to comprehensively summarize the research progress of β -Ga₂O₃ power diodes, from material properties, preparation techniques, contact mechanisms to device performance of different structures, so as to provide guidance for future research and development.