Abstract:The effect of intentionally introducing a large depolarization field in (001)‐oriented, epitaxial Pb(Zr0.2TiO0.8)O3 (PZT) ultrathin films grown on La0.67Sr0.33MnO3 (LSMO) buffered SrTiO3 (STO) substrates is investigated. Inserting between 3 and 10 unit cells of STO between two 3 nm thick PZT films significantly influences the out‐of‐plane (c) lattice constant as well as the virgin domain state. Piezoresponse force microscopy images reveal a nanoscale (180°) polydomain structure in these films. In comparison, a “reference” single layer PZT sample (6 nm thick without STO spacer) exhibits an elongated PZT c‐axis (0.416 nm) and is preferentially “down”‐polarized with large regions of monodomain contrast. It shows asymmetric switching loops (i.e., imprint) coupled with sluggish domain switching under external bias. It is shown that the insertion of STO drives a monodomain to 180° polydomain transition in the as‐grown state, which reduces the imprint by 80%. The insertion of the STO also profoundly improves dielectric leakage and hence the distribution of the applied electric field. Consequently, the critical pulse duration of the electric field required to initiate domain switching is reduced by two orders of magnitude relative to the reference sample. These results demonstrate the possibility of manipulating the depolarization field in such a way that it has positive effects on the ferroelectric behavior of ultrathin PZT films. The effect of intentionally introducing a large depolarization field in ultrathin ferroelectric films is investigated. It is shown that manipulation of the depolarization field in ultrathin Pb(Zr0.2TiO0.8)O3 (PZT) films can lead to promising results. Key benefits include a strong reduction of internal bias (imprint) as well as dramatic shortening of the critical pulse duration of the electric field required to initiate domain switching.

Positive Effect of an Internal Depolarization Field in Ultrathin Epitaxial Ferroelectric Films

Polarization loop deformations of an oxygen deficient Pb(Zr0.25,Ti0.75)O3 ferroelectric thin film

Effects of Thickness on the Polarization States in Epitaxial Ferroelectric Thin Films

Giant Negative Electrocaloric Effect Induced by Domain Transition in the Strained Ferroelectric Thin Film

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Enhanced Ferroelectric Properties Of Pb(Ta0.05zr0.48ti0.47)O-3 Thin Films On Pt/Tio2/Sio2/Si Substrates Using La0.67sr0.33mno3 Buffer Layers

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films

Phase Coexistence and Broad Depolarization Response in (Pb,la)(zr,sn,ti)o-3 Single Crystals

Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O<sub>3</sub>/LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O 3 /LaAlO 3 /SrTiO 3 Heterostructures.

Direct Spectroscopic Evidence of Charge Reversal at the Pb(Zr0.2Ti0.8)O

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

Interface Control Of Surface Photochemical Reactivity In Ultrathin Epitaxial Ferroelectric Films

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O3 Thin Films

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Effect of electric field intensity on domain kinetics of Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystal

Electric Field Induced Phase Transition and Domain Structure Evolution in (pb, La)(Zr, Sn, Ti)O3 Single Crystal

Influence of depolarization field on temperature-misfit strain phase diagram of PbZr0.4Ti0.6O3 ultrathin films

PFM Study of the 90 Degrees Step-by-Step Domain Switching and the Temperature Effect in 0.8Pbtio(3)-0.2Bi(mg0.5ti0.5)o-3 Ferroelectric Thin Film