Abstract:The optimization of microelectronic devices and Microelectromechanical Systems (MEMS) technology depends on the knowledge of the mechanical and thermophysical properties of the thin film materials used to fabricate them. The thickness, stoichiometry, structure and thermal history can affect the properties of thin films causing their mechanical and thermophysical properties to diverge from bulk values. Moreover, it is known that the mechanical and thermophysical properties of thin films vary considerably at different temperatures. Bulk properties of semiconductors have been characterized over a wide range of temperatures; however there is limited information on thin film properties of silicon-based compounds such as silicon nitride, specially at high temperatures. In our work, MEMS devices designed to record the localized maximum temperature during high temperature thermal processes, which we call Breaking T-MEMS, will be presented as a way to determine some of the mechanical properties (Young's modulus and fracture strength) and thermophysical properties (coefficient of thermal expansion) of silicon-rich nitride thin films at high temperatures. The Breaking T-MEMS device consists of a thin film bridge suspended over a substrate. During testing, the devices are thermally loaded in tension by heating the sample. The low coefficient of thermal expansion of the film relative to that of the substrate causes the thin film bridge to break at a specific temperature. Through a combination of indirect experimental measurements, analytical expressions, numerical and statistical analysis, and if the experiments are conducted using at least two different substrates of known temperaturedependent coefficients of thermal expansion, some of the material properties of the film can be calculated from the breaking temperatures of various devices. The two candidate materials for the substrate are silicon and aluminum oxide (sapphire).

Thermoresistive properties of p-type 3C–SiC nanoscale thin films for high-temperature MEMS thermal-based sensors

Unintentionally Doped Epitaxial 3C-SiC(111) Nanothin Film as Material for Highly Sensitive Thermal Sensors at High Temperatures

Characterization of the Piezoresistance in Highly Doped P-Type 3C-Sic at Cryogenic Temperatures

Thermoresistance of P‐type 4h–sic Integrated MEMS Devices for High‐Temperature Sensing

Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

MEMS-based Pt Film Temperature Sensor Chip on Silicon Substrate

Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors

Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

Formation Mechanism, Interface Characteristics and the Application of Metal/sic Thin-Film Ohmic Contact after High-Temperature Treatment

Study on Novel Temperature Sensor Based on Amorphous Carbon Film

Mechanical and Thermophysical Properties of Silicon Nitride Thin Films at High Temperatures Using In-Situ Mems Temperature Sensors

Fabrication and performance study of high temperature thin film sensor

Thickness Dependence of the Piezoresistive Effect in P-Type Single Crystalline 3C-Sic Nanothin Films

AlN/6H-SiC SAW resonator for high temperature wireless SAW sensor

MEMS-based Pt Film Temperature Sensor on an Alumina Substrate

An On‐Chip SiC MEMS Device with Integrated Heating, Sensing, and Microfluidic Cooling Systems

Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

Piezoresistive temperature sensors fabricated by a surface micromachining CMOS MEMS process

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

High Temperature Thin-Film Sensor Technologies For Advanced Propulsion Materials