Si96: A New Silicon Allotrope with Interesting Physical Properties

Qingyang Fan,Changchun Chai,Qun Wei,Peikun Zhou,Junqin Zhang,Yintang Yang
DOI: https://doi.org/10.3390/ma9040284
IF: 3.4
2016-04-13
Materials
Abstract:The structural mechanical properties and electronic properties of a new silicon allotrope Si<sub>96</sub> are investigated at ambient pressure by using a first-principles calculation method with the ultrasoft pseudopotential scheme in the framework of generalized gradient approximation. The elastic constants and phonon calculations reveal that Si<sub>96</sub> is mechanically and dynamically stable at ambient pressure. The conduction band minimum and valence band maximum of Si<sub>96</sub> are at the R and G point, which indicates that Si<sub>96</sub> is an indirect band gap semiconductor. The anisotropic calculations show that Si<sub>96</sub> exhibits a smaller anisotropy than diamond Si in terms of Young's modulus, the percentage of elastic anisotropy for bulk modulus and shear modulus, and the universal anisotropic index <i>A</i><sup>U</sup>. Interestingly, most silicon allotropes exhibit brittle behavior, in contrast to the previously proposed ductile behavior. The void framework, low density, and nanotube structure make Si<sub>96</sub> quite attractive for applications such as hydrogen storage and electronic devices that work at extreme conditions, and there are potential applications in Li-battery anode materials.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
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