Abstract:Aluminum nitride (AlN) continues to kindle considerable interest in various microelectromechanical system (MEMS)-related fields because of its superior optical, mechanical, thermal, and piezoelectric properties. In this study, we use magnetron sputtering to tailor intrinsic stress in AlN thin films from highly compressive (-1200 MPa) to highly tensile (+700 MPa), with a differential stress of 1900 MPa. By monolithically combining the compressive and tensile ultrathin AlN bilayer membranes (20-60 nm) during deposition, perfectly curved three-dimensional (3D) architectures are spontaneously formed upon dry-releasing from the substrate via a 3D MEMS approach: the complementary metal-oxide-semiconductor (CMOS)-compatible strain-induced self-rolled-up membrane (S-RuM) method. The thermal stability of the AlN 3D architectures is examined, and the curvature of S-RuM microtubes and helical structures as a function of the cumulative membrane thickness and stress are characterized experimentally and simulated using a finite-element physiomechanic method. By combining AlN with various materials such as metal (Cu) and silicon nitride (SiNx), AlN-based hybrid S-RuM microtubes with diameters as small as ∼6 μm are demonstrated with a near-unity yield (∼99%). Compared with other stressed thin films for S-RuMs, including PECVD SiNx, magnetron-sputtered AlN-based S-RuMs show better structural controllability and versatility, probably due to the high Young's modulus and stress uniformity. This work establishes the sputtered AlN thin film as a superior stress-configurable S-RuM shell material for high-performance applications in miniaturizing and integrating electronic components beyond those based on other materials such as SiNx. In addition, for the first time, a single-crystal Al1-xScxN/AlN bilayer grown by molecular beam epitaxy is successfully rolled-up with the diameter varying from ∼9 to 14 μm, paving the way for 3D tubular Al1-xScxN piezoelectric devices.

Design, analysis, and characterization of stress-engineered 3D microstructures comprised of PECVD silicon oxide and nitride

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Amorphous Silicon Self‐Rolling Micro Electromechanical Systems: From Residual Stress Control to Complex 3D Structures

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Mechanically-Guided Deterministic Assembly of 3D Mesostructures Assisted by Residual Stresses.

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Study of Local Stress Using Stress-Absorbing Si Diaphragm

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Residual Stress Study of SiO2/Pt/Pb(Zr,Ti)O3/Pt Multilayer Structure for Micro Electro Mechanical System Applications

Experimental Study of the Internal Stress of Silicon Nitride Films Deposited by PECVD

Voxelated Meniscus-Confined Electrodeposition of 3D Metallic Microstructures

Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process

Fabrication and Deformation of 3D Multilayered Kirigami Microstructures.

Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

Fabrication and Mechanical Cycling of Polymer Microscale Architectures for 3D MEMS Sensors

Synthesis and Characterization of LPCVD Polysilicon and Silicon Nitride Thin Films for MEMS Applications

An integrated push-to-pull micromechanical device: Design, fabrication, and in-situ experiment

Microfabrication Technology of Three-Dimensional Microdevices and Their Mems Applications

Novel 3-D Device Fabrication Process in Micro-Electronic Mechanical System Based on Nano-Imprint Lithography