Abstract:Bilayer‐channel oxide TFTs are fabricated. The top and bottom active layer characteristics are designed by controlling the semiconductor thickness. Top active layer characteristics affect electron transport and stability in bilayer‐channel TFTs. An optimized heterostructure channel leads to effective electron transport and outstanding bias stability. Metal‐oxide thin‐film transistors (TFTs) have garnered much attention because of their advantages such as high transparency, low leakage current, and low processing temperature. However, there is a need to continuously improve their mobility and bias stability for application to next‐generation advanced electronics. In this study, the thickness of bilayer semiconductors is finely controlled to enhance the charge transport characteristics and bias stability in solution‐processed heterojunction oxide TFTs. The thicknesses of the top and bottom layers in the bilayer are individually adjusted by controlling solution molarity. The introduction of a bilayer channel improved the electrical performance of oxide TFTs via effective charge transport. However, trap‐limited conduction becomes dominant in the bilayer with an excessively thick top layer, thereby leading to a significant reduction in mobility and positive bias stability. Meanwhile, although increasing the bottom layer thickness contributes to improved mobility and reliability, it causes a serious negative shift in threshold voltage (VTH). TFTs with an optimized bilayer structure show high mobility at a VTH close to 0 V and have particularly excellent positive bias stress stability. This study on bilayer channel thickness will be beneficial for developing advanced transistors with optimized bilayer or multilayer channels.

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High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

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High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide Solution Processing

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Low-Temperature Solution-Processed Bilayer Ingazno/In 2O 3 Thin Film Transistors Based on Lightwave Annealing

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors