Abstract:Oxide semiconductors are being researched for 3D back‐end‐of‐line integration as silicon‐based materials reach their limits. This study develops atomically‐ordered InGaZnO transistors with high mobility (>100 cm2 Vs−1) using plasma‐enhanced atomic layer deposition, controlling plasma energy to find out the origin of the ultra‐high mobility. These understanding insights the powerful potential of PEALD‐OS as a next‐generation active material for replacing silicon. As the scale‐down and power‐saving of silicon‐based channel materials approach the limit, oxide semiconductors are being actively researched for applications in 3D back‐end‐of‐line integration. For these applications, it is necessary to develop stable oxide semiconductors with electrical properties similar to those of Si. Herein, a single‐crystal‐like indium–gallium–zinc–oxide (IGZO) layer (referred to as a pseudo‐single‐crystal) is synthesized using plasma‐enhanced atomic layer deposition and fabricated stable IGZO transistors with an ultra‐high mobility of over 100 cm2 Vs−1. To acquire high‐quality atomic layer deposition‐processed IGZO layers, the plasma power of the reactant is controlled as an effective processing parameter by evaluating and understanding the effect of the chemical reaction of the precursors on the behavior of the residual hydrogen, carbon, and oxygen in the as‐deposited films. Based on these insights, this study found that there is a critical relationship between the optimal plasma reaction energy, superior electrical performance, and device stability.

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Approaches for 3D Integration Using Plasma‐Enhanced Atomic‐Layer‐Deposited Atomically‐Ordered InGaZnO Transistors with Ultra‐High Mobility

P‐154: Late‐News Poster: High‐Performance Indium‐Gallium Oxide Thin‐Film‐Transistors via Plasma‐Enhanced Atomic‐Layer‐Deposition

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Exploring the Potential of InCp Precursor in Plasma-Enhanced Atomic Layer Deposition for High-Performance IZO-TFTs

Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Single-crystalline-like indium tin oxide thin films prepared by plasma enhanced atomic layer deposition

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Fabrication and performance of indium oxide based transparent thin film transistors

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Review — Extremely Thin Amorphous Indium Oxide Transistors

Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process