Abstract:ZnGeP2 crystals are the frequency conversion materials with the excellent comprehensive performances in a range of 3–5 μm. However, the overlap of the absorption band and the pump wavelength range of optical parametric oscillator at 8–12 μm limits the application performance of the optical parametric oscillator and makes it impossible to achieve a far-infrared laser output. In this work, the formation energy and migration mechanism of six kinds of defects of ZnGeP2 crystal are discussed by density functional theory. The results show that two defective structures of \begin{document}$\rm{V_P}$\end{document}and \begin{document}$\rm{V_{Ge}}$\end{document} are difficult to form, while four defective structures of \begin{document}$\rm V_{\rm Zn}^ -$\end{document}, \begin{document}$\rm{Z{n_{Ge}}}$\end{document}, \begin{document}$ {\rm Ge}_{\rm Zn}^ + $\end{document} and \begin{document}$\rm{ G{e_{\rm Zn}} + {V_{\rm Zn}}}$\end{document} are easy to create. When the number of Ge atoms are slightly more than that of Zn atoms in ZnGeP2 crystals, the vacancy defects \begin{document}$\rm V_{\rm Zn}^ -$\end{document} form more easily than antistructure defects \begin{document}$ {\rm Ge}_{\rm Zn}^ + $\end{document} at 10 K, 500 K and 600 K, but the antistructure defects \begin{document}$ {\rm Ge}_{\rm Zn}^ + $\end{document} are easier to form than the vacancy defects \begin{document}$ {\text{V}}_{\text{Zn}}^{-} $\end{document} at 273 K and 400 K. There is a negative correlation between the volume expansion rate and the defect formation energy of ZnGeP2 crystal. The larger the volume expansion rate, the lower the defect formation energy is. The differential charge density shows that the electron cloud density among the atoms is enhanced in the defective structures of GeZn and VZn+GeZn. The electron cloud density at the lattices of vacancy defects is enhanced when the vacancy defects (VZn and VGe) and antistructure defects (GeZn and ZnGe) form the joint defects. Comparing with the defect-free cells, the charge of Zn atoms increases significantly, that of Ge is significantly reduced, and that of P does not change in the antistructure defect ZnGe or GeZn. The absorption spectra of ZnGeP2 crystal at 10K show that there is the significant absorption in a wavelength range from 0.6 μm to 2.5 μm for the four defective structures: VGe, VZn, ZnGe and GeZn, while the absorption in this range is small for the defective structures VP and GeZn+VZn. The VZn has the lowest migration energy, while VGe has the highest. The difficulty for VP to migrate depends on the space resistance, while the difficulty for VGe and VZn to migrate depend on the inter-atomic distance. This may be related to the small radius and high proportion of P atoms and the large radius and low proportion of Ge and Zn atom in ZnGeP2 crystal.

Ge: defect formation energy

Ge-substitutional defects and the r3xr3 <--> 3x3 transition in alpha--SnGe(111)

Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‐Based Device Performance

Numerical Study of the Defect Adamantine Compound CuGaGeSe4

New Perspective on Formation Energies and Energy Levels of Point Defects in Nonmetals

Investigation of Stability and Migration Mechanism of Defects in ZnGeP2 Crystals by Density Functional Theory

Ab Initio Study on Intrinsic Defect Properties of Germanium Nitride Considered for Gate Dielectric

A Unified Mid-Gap Defect Model for Amorphous GeTe Phase Change Material

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

Germylene energetics: spectroscopic constants and bond dissociation energies of GeX, GeX−, GeX+, GeX2, GeX2− and GeX2+ (X = F, Cl, Br and I)

Threshold Displacement Energy In Gan: Ab Initio Molecular Dynamics Study

Defect Physics of Ternary Semiconductor Zn Ge P 2 with a High Density of Anion-Cation Antisites: A First-Principles Study

The Electronic Structures and Optical Properties of Zn2geo4 with Native Defects

Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

The structure, energy, and electronic states of vacancies in Ge nanocrystals

Abnormal behavior of preferred formation of cationic vacancy from the interior in γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

Defect Formation in Gd3AlxGa5–xO12 (x = 1–3) and Gd3Al2Ga3O12:Ce Crystals

Capacitance-Transient Spectroscopy on Irradiation-Induced Defects in Ge

Defect Physics of Ternary Semiconductor ZnGeP2 with a High Density of Anion-Cation Antisites: A First-Principles Study