Abstract:A universal, residual‐free, and scalable van der Waals metal integration strategy with chemical functionalized top‐contact electrodes is demonstrated to apply for high‐performance organic field‐effect transistors and logic circuits. PFBT functionalizes Au van der Waals contact significantly improves charge injection of devices and results in four‐fold mobility increase compared to thermal evaporated electrodes. Efficient charge injection at metal/semiconductor interface is of great importance for high‐performance organic field‐effect transistors (OFETs). In OFETs, top‐contact configuration generally exhibits better injection efficiency but may induces thermal damage to organic layer and is intrinsically difficult to modified with chemisorbs at metal/semiconductor interface. Herein, a versatile, large‐scale and damage‐free metal integration strategy is reported to achieve efficient charge injection in OFETs by applying self‐assembly monolayers (SAMs) functionalized van der Waals (vdW) top‐contact electrodes. Centimeter scale metal electrodes are transferred onto organic single crystal to form OFETs array without residual left. vdW contact provides a clear and atomic sharp interface, and thus the inherent electronic structure and physical properties of the pristine heterostructure interface can be retained. Modifying fluorinated SAMs at metal/semiconductor interface alters the work function of Au by 350 meV, and thus reduces the energy barrier for charge injection. As a result, OFETs array exhibits excellent performance characteristics with an average mobility of 3.6 cm2 V−1 s−1, negligible hysteresis and a high on/off ratio above 106 on high‐k AlOx dielectric. Organic unipolar inverters based on all vdW contact are also demonstrated. This strategy paves the way for both fundamental study and practical applications of organic electronics.

Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

On Practical Charge Injection at the Metal/Organic Semiconductor Interface

High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

Forming Semiconductor/dielectric Double Layers by One-Step Spin-Coating for Enhancing the Performance of Organic Field-Effect Transistors

Metal/Organic Interfaces: Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer (adv. Funct. Mater. 25/2016)

Reducing the Barrier Height in Organic Transistors

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes

Improving the charge injection in bottom contact organic transistors by carbon electrodes

Ultralow contact resistance in organic transistors via orbital hybridization

Highly Enhanced Charge Injection in Thienoacene-Based Organic Field-Effect Transistors with Chemically Doped Contact

On the Nature of Charge-Injecting Contacts in Organic Field-Effect Transistors

Improving Charge Injection for Organic Field‐Effect Transistor Array via Chemical Functionalized Van der Waals Top‐Contacts

Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Enhanced Charge Carrier Injection in Heterojunction Organic Field-Effect Transistor by Inserting an MoO 3 Buffer Layer

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Improvement of Charge Transfer Between Electrode and Semiconductor by Thin Metal Oxide Insertion

Interface Collaborative Strategy for High Mobility Organic Single‐Crystal Field‐Effect Transistors with Ideal Current–Voltage Curves

Dopant/Semiconductor/Electret Trilayer Architecture for High‐Performance Organic Field‐Effect Transistors