Properties of ITO (Indium Tin Oxide) Film Deposited by Ion-Beam-Assisted Sputter

Sung Ho Lee,Sang Hyun Cho,Hyo Jin Kim,Sung Hong Kim,Sang Geul Lee,Kyu Ho Song,Pung Keun Song
DOI: https://doi.org/10.1080/15421406.2012.691772
IF: 0.7
2012-09-19
Molecular Crystals and Liquid Crystals
Abstract:The ITO films were deposited on polyethylenenaphthalate at the room temperature using dc magnetron sputtering system with Ar ion-beam assist. The dc sputtering power was maintained at 200 W, and the Ar ion-beam power was varied from 20 to 70 W. The change in the resistance of the ITO films in the cyclic bending tests was significantly delayed with the Ar-ion-beam power 40 W. Also, the ITO film showed relatively low resistivity (5.39 × 10−4 Ωcm). Thus. the ITO film showed good mechanical and electrical properties attributable to the effect of Ar ion bombardment on the thin film formation.
chemistry, multidisciplinary,materials science,crystallography
What problem does this paper attempt to address?