Properties and Conductivity Mechanism of ITO Films Prepared by R.f. Magnetron Sputtering

LI Shi-tao,QIAO Xue-liang,CHEN Jian-guo

DOI: https://doi.org/10.3321/j.issn:1004-0609.2006.04.021

2006-01-01

Abstract:The high quality ITO thin films were prepared at different temperatures by r.f.magnetron sputtering.The results show that Ar partial pressure(p(Ar)) has an important influence on the conductance and transmission in visible range(T_(VIL)).The optimal p(Ar) is 0.2Pa ascertained by experiments.The sheet resistance,T_(VIL) and color of ITO films depend on the film thickness.The film properties can be improved by elevating substrate temperature(t_s).For instance the films with T_(VIL) larger than 90% and sheet resistance 13.1Ω/□ are obtained when t_s is 200℃.Based on the growth theory of ITO thin films during the three steps,the relations between the conductivity and the film thickness are established according to thermionic emission and tunneling,percolative form of film conductivity and Cottey model of conductivity mechanism.The critical thickness d_c,which is about 4854nm,is confirmed by the experiment data.The validity of conductivity mechanism and dimensional effect are confirmed by analysis of AFM for ITO surface.