High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure

Wenyu Ji,Pengtao Jing,Wei Xu,Xi Yuan,Yunjun Wang,Jialong Zhao,Alex K.-Y. Jen
DOI: https://doi.org/10.1063/1.4817086
IF: 4
2013-07-29
Applied Physics Letters
Abstract:Deep-blue, high color purity electroluminescence (EL) is demonstrated in an inverted light-emitting device using nontoxic ZnSe/ZnS core/shell quantum dots (QDs) as the emitter. The device exhibits moderate turn-on voltage (4.0 V) and color-saturated deep blue emission with a narrow full width at half maximum of ∼15 nm and emission peak at 441 nm. Their maximum luminance and current efficiency reach 1170 cd/m2 and 0.51 cd/A, respectively. The high performances are achieved through a ZnO nanoparticle based electron-transporting layer due to efficient electron injection into the ZnSe/ZnS QDs. Energy transfer processes between the ZnSe/ZnS QDs and hole-transporting materials are studied by time-resolved photoluminescence spectroscopy to understand the EL mechanism of the devices. These results provide a new guide for the fabrication of efficient deep-blue quantum dot light-emitting diodes and the realization of QD-based lighting sources and full-color panel displays.
physics, applied
What problem does this paper attempt to address?