Deep centers in gold‐doped HgCdTe

C. A. Merilainen,C. E. Jones

DOI: https://doi.org/10.1116/1.572246

1983-07-01

Abstract:Gold is a fast-diffusing acceptor in HgCdTe. It has been used as a p-type dopant and as a metal contact. This paper reports the presence of deep levels in gold-doped x=0.48 Hg1−xCdxTe. Two types of spectra were observed; each had energy levels between Ev +1/4 Egap and Ev +1/2 Egap. The capture cross sections for these centers have been determined and for most of the levels they involve small hole capture cross sections, 10−17 to 10−21 cm2, and moderate electron capture cross sections, 10−15 to 10−16 cm2. The hole capture cross sections for these centers had large negative activation energies indicative of hole capture at a positive center with a Coulomb repulsive barrier. The corresponding electron capture is then at Coulombically attractive positive centers. The situation described requires that the DLTS activation energies be corrected for the temperature dependence of the hole capture cross sections and for the Poole–Frenkel effect for electron capture. The energy levels and capture cross sections reported make these centers effective minority carrier recombination sites in p-type material. The minority carrier lifetimes measured are very close to those calculated for Shockley–Read recombination at the DLTS characterized centers.

physics, applied,materials science, coatings & films