Abstract:Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size, cost, and need for high optical pump powers. Here, we demonstrate a monocrystalline Ti:Sa-on-insulator (Ti:SaOI) photonics platform which enables dramatic miniaturization, cost-reduction, and scalability of Ti:Sa technology. First, through fabrication of low-loss whispering gallery mode resonators, we realize a Ti:Sa laser operating with an ultra-low lasing threshold of 290 $\mu$W. Then, through orders-of-magnitude improvement in mode confinement in Ti:SaOI waveguides, we realize the first integrated solid-state (i.e., non-semiconductor) optical amplifier operating below 1 $\mu$m, with an ultra-wide bandwidth of 700 - 950 nm and peak gain of 64 dB/cm. We demonstrate unprecedented 17 dB distortion-free amplification of picosecond pulses to up to 2.3 nJ pulse energy, corresponding to a peak power of 1.0 kW. Finally, we demonstrate the first tunable integrated Ti:Sa laser, featuring narrow linewidths and a 24.7 THz tuning range, which, for the first time, can be pumped with low-cost, miniature, off-the-shelf green laser diodes. This opens doors to new modalities of Ti:Sa lasers (now occupying a footprint less than 0.15 mm$^2$), such as massively-scalable Ti:Sa laser array systems for a variety of applications. As a proof-of-concept demonstration, we employ a Ti:SaOI laser array as the sole optical control for a cavity quantum electrodynamics experiment with artificial atoms in silicon carbide. This work is a key step towards the democratization of Ti:Sa technology through a three orders-of-magnitude reduction in cost and footprint, as well as the introduction of solid-state broadband amplification of sub-micron wavelength light.

High-efficiency cluster laser vaporization sources based on Ti: sapphire lasers

Ablation Efficiency of a Novel Thulium Fiber Laser: an in Vitro Study on Laser Setting and Fiber Usage.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Seeded free-electron laser driven by a compact laser plasma accelerator

Titanium:sapphire-on-insulator integrated lasers and amplifiers

High efficiency femtosecond laser ablation with gigahertz level bursts

Simple and Compact Nozzle Design for Laser Vaporization Sources

Fiber-laser-pumped Ti:sapphire laser

Size-Selected Cluster Beam Source Based on Radio Frequency Magnetron Plasma Sputtering and Gas Condensation

High-Power and High-repetition-rate widely tunable Narrow-Linewidth low-gain-band Ti: Sapphire laser

Ti : Sapphire-Laser Pumped 20 At.% Yb : Yag Thin Chip With Continuous-Wave Laser Output Of 356 Mw At 1.053 Mu M

High Pulse Energy, High Beam Quality Microsecond-Pulse Ti:sapphire Laser at 819.7 Nm

High Power Vertical-External-Cavity Surface-Emitting Laser

A High-Pulse-Energy High-Beam-Quality Tunable Ti:Sapphire Laser Using a Prism-Dispersion Cavity

Ti : Sapphire-Laser Pumped 20at%Yb : Yag Thin Chip With High Efficiency Cw Laser Output Of 1.053 Mu M

Titanium:Sapphire-on-insulator for broadband tunable lasers and high-power amplifiers on chip

Note: Proof Of Principle Of A New Type Of Cluster Beam Source With Potential For Scale-Up

Nanosecond pulsed laser-processing of CVD diamond

Sub-pm linewidth, high pulse energy, high beam quality microsecond-pulse Ti:sapphire laser at 766.699 nm

Low-debris Plasma Source Produced by High-Power Laser

High efficiency laser ablation of gold thin film by 2.8 GHz intraburst repetition rate pulses