4.1 A 39GHz-Band CMOS 16-Channel Phased-Array Transceiver IC with a Companion Dual-Stream IF Transceiver IC for 5G NR Base-Station Applications
H.-C. Park,D. Kang,S. M. Lee,B. Park,K. Kim,J. Lee,Y. Aoki,Y. Yoon,S. Lee,D. Lee,D. Kwon,S. Kim,J. Kim,W. Lee,C. Kim,S. Park,J. Park,B. Suh,J. Jang,M. Kim,D. Minn,I. Park,S. Kim,K. Min,J. Park,S. Jeon,A.-S. Ryu,Y. Cho,S. T. Choi,K. H. An,Y. Kim,J. H. Lee,J. Son,S.-G. Yang
DOI: https://doi.org/10.1109/isscc19947.2020.9063006
2020-02-01
Abstract:Increasing demands on high-data-rate and low-latency cellular communications are accelerating the developments of millimeter-wave (mm-wave) systems for 5G NR in 28 and 39GHz bands. In order to provide the 5G communication systems worldwide, high-performance and low-cost RF chipset solutions are required. Recently, 5G mm-wave CMOS/BiCMOS RF phased-array transceivers for the 28GHz band have been reported [1]–[5]. However, there are very limited reports for the 39GHz band [6], which is one of the main frequency bands in the US, Canada, China and other countries. In this paper, we present both a 39GHz 16-channel RF phased-array transceiver IC in 28nm CMOS and a dual-stream IF transceiver IC in 65nm CMOS. These chipsets can be scaled up to >500 RF phased-array elements and support dual-stream (MIMO) in 5G NR base-station applications.