Influence of monovalent Bi+ doping on real composition, point defects, and photoluminescence in TlCdCl3 and TlCdI3 single crystals

Daria N. Vtyurina,Polina A. Eistrikh-Geller,Galina M. Kuz’micheva,Victor B. Rybakov,Evgeny V. Khramov,Irina A. Kaurova,Dmitry Yu. Chernyshov,Vladimir N. Korchak
DOI: https://doi.org/10.1007/s40843-017-9118-3
2017-10-13
Science China Materials
Abstract:The structural features and real compositions with point defects of Bi+-doped TlCdCl3 and TlCdI3 single crystals, grown by the Bridgman-Stockbarger technique, are first studied using the X-ray diffraction, X-ray synchrotron radiation, and EXAFS/XANES spectroscopy. In the structures of Bi+-doped TlCdCl3 and TlCdI3 crystals, the Cd, Cl, and I sites are found to be defect-free. The vacancies in the Tl sites and interstitial Bi atoms located in the vicinity of the Tl sites are detected in the structures of both samples. In the Bi+-doped TlCdCl3, the presence of a small amount of Bi+ ions in the Tl+ sites is possible. The correlation between photoluminescence bands and point defects in the refined structures are determined. Photoluminescence spectra and decay kinetics of the Bi+-doped TlCdCl3 and TlCdI3 demonstrate that they are attractive materials for potential applications in photonics.
materials science, multidisciplinary
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